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APT80GA90B APT80GA90S
900V High Speed PT IGBT
OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA90B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT
(R)
T
APT80GA90S
D3PAK
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage
2 1
Ratings
900 145 80 239 30 625 239A @ 900V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 47A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
900
Typ
2.5 2.2 4.5
Max
3.1 6 250 1000 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6324 Rev B 3 - 2009
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
5.9
Max
0.2 -
Unit
C/W g in*lbf
10
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 47A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 47A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 47A RG = 4.74 TJ = +125C 18 29 149 85 1652 1389 18 31 192 128 2813 2082 239
APT80GA90B_S
Min Typ
4560 411 62 200 30 72 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
A
ns
J
ns
J
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6324 Rev B 3 - 2009
Typical Performance Curves
100
V
GE
APT80GA90B_S
350 TJ= 125C TJ= 150C IC, COLLECTOR CURRENT (A) 300 250 200 8V 150 100 50 0 7V 6V 5V 15V 13V 10V 9V
= 15V
IC, COLLECTOR CURRENT (A)
TJ= 55C 80 TJ= 25C
60
40
20
0
0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
250
16 14 12 10 8 6 4 2 0
0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 47A C T = 25C
J
IC, COLLECTOR CURRENT (A)
200
VCE = 180V
150
VCE = 450V VCE = 720V
100
TJ= 125C TJ= 25C TJ= -55C
50
0
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4 3 2 1 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
0
20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate charge
6 5 4 3 2 1 0
IC = 94A IC = 47A IC = 23.5A
IC = 94A IC = 47A
IC = 23.5A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
6
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
0
25
1.15
150 125 100 75 50 25 0 052-6324 Rev B 3 - 2009
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
IC, DC COLLECTOR CURRENT (A)
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
25
Typical Performance Curves
24 td(ON), TURN-ON DELAY TIME (ns) 22 20 18 16 14 12 10 td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 600V TJ = 25C, or 125C RG = 4.7 L = 100H
APT80GA90B_S
300 250 200
VGE =15V,TJ=125C
150 100 50 0
VCE = 600V RG = 4.7 L = 100H VGE =15V,TJ=25C
20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
RG = 4.7, L = 100H, VCE = 600V
0
100
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 175
80
150 tr, FALL TIME (ns) 125 100 75 50 25 100
TJ = 125C, VGE = 15V
tr, RISE TIME (ns)
60
40
TJ = 25C, VGE = 15V
20
TJ = 25 or 125C,VGE = 15V
0
0
20
40
60
80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 7000 Eon2, TURN ON ENERGY LOSS (J) 6000 5000 4000 3000 2000 1000 0 EOFF, TURN OFF ENERGY LOSS (J)
V = 600V CE V = +15V GE R =4.7
G
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 6000 5000 4000 3000 2000 1000 0
TJ = 25C
V = 600V CE V = +15V GE R = 4.7
G
0
RG = 4.7, L = 100H, VCE = 600V
TJ = 125C
TJ = 125C
TJ = 25C
20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 12000 SWITCHING ENERGY LOSSES (J) 10000 8000 6000 4000 2000 0
Eon2,47A Eoff,47A Eon2,23.5A Eoff,23.5A Eon2,94A
V = 600V CE V = +15V GE T = 125C
J
0
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 7000 SWITCHING ENERGY LOSSES (J) 6000 5000 4000 3000 2000 1000 0
Eon2,47A Eoff,47A Eon2,23.5A Eoff,23.5A
V = 600V CE V = +15V GE R = 4.7
G
Eon294A Eoff,94A
Eoff,94A
052-6324 Rev B 3 - 2009
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10000 Cies
APT80GA90B_S
1000
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
100
1000
10
Coes 100 Cres 10
1
0 200 400 600 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
0.1
VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
1
10
100
1000
0.25 ZJC, THERMAL IMPEDANCE (C/W)
0.20
D = 0.9 0.7 0.5
Note:
0.15
PDM
0.10 0.3 0.05 0.1 0 0.05 10
-5
t1 t2
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1
TJ (C)
TC (C)
Dissipated Power (Watts)
.00909
.3886
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
.04874
.1508
052-6324 Rev B 3 - 2009
APT80GA90B_S
10% Gate Voltage td(on) TJ = 125C 90% tr
V CC IC V CE
APT30DQ100
Collector Current
5%
10%
5% Collector Voltage
Switching Energy
A D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
TO-247 (B) Package Outline
e3 100% Sn Plated
(Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D3PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
Collector
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
052-6324 Rev B 3 - 2009
Gate Collector
Heat Sink (Drain) and Leads are Plated
Emitter
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
Emitter Collector
Dimensions in Millimeters and (Inches)
Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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